| PART |
Description |
Maker |
| 2SA1928 |
FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC]
NEC Corp.
|
| UPA811T-T1 UPA811 UPA811T PA811T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠?
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD
Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC]
NEC Corp.
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| MGA-17516-BLKG MGA-17516-TR1G |
Low Noise, High Linearity Match Pair Low Noise Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| 2SC5435 |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC Corp.
|
| ADN2820 ADN2820ACHIPS ADN2820S21 |
10.7 Gbps, 3.3V, Low Noise, TIA with Average Power Moniter 10.7 Gbps的，3.3，低噪声，与平均功率监视器行业协
10.7 Gbps, 3.3V, Low Noise, TIA with Average Power Moniter SPECIALTY TELECOM CIRCUIT, UUC14
10.7 Gbps Low Noise, High Gain Transimpedance Amplifier IC with Performance Monitor
|
Analog Devices, Inc.
Avago Technologies, Ltd.
AD[Analog Devices]
|
